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1 cgh35060f1 / cgh35060p1 60 w, 3.3-3.6 ghz, 28v, gan hemt for wimax, broadband wireless access crees cgh35060f is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the cgh35060f ideal for 3.3-3.6 ghz wimax and bwa linear amplifer applications. the transistor is supplied in a ceramic/ metal fange and pill package. cree gan-on-sic hemts are highly correctable, enabling even greater effciency when used with digital pre-distortion (dpd). package type: 440193 & 440196 pn: cgh35060f1 & cgh35060p1 r e v 3 . 1 - f e b r u a r y 2 0 1 6 features ? 3.3 - 3.6 ghz operation ? 60 w peak power capability ? 12 db small signal gain ? 8.0 w p ave at < 2.0 % evm ? 25 % drain effciency at 8 w p ave ? wimax fixed access 802.16-2004 ofdm ? wimax mobile access 802.16e ofdma typical performance over 3.3-3.6ghz (t c = 25?c) of demonstration amplifer parameter 3.3 ghz 3.4 ghz 3.5 ghz 3.6 ghz units small signal gain 11.7 12.2 12.6 12.8 db evm @ 26 dbm 2.05 1.82 1.56 1.80 % evm @ 39 dbm 1.91 1.83 1.98 2.86 % drain effciency @ 39 dbm 22.0 23.1 24.9 26.7 % input return loss 8.0 10.3 12.5 13.1 db note: measured in the CGH35060F1-AMP amplifer circuit, under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, 5 ms burst, symbol length of 59, coding type rs-cc, coding rate type 2/3, par = 9.8 db @ 0.01 % probability on ccdf. subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units conditions drain-source voltage v dss 84 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c power dissipation p diss 28 watts storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 15 ma 25?c maximum drain current 1 i max 6 a 25?c soldering temperature 2 t s 245 ?c screw torque 80 in-oz thermal resistance, junction to case 3 r jc 2.8 ?c/w 85?c case operating temperature 3 t c -40, +150 ?c note: 1 current limit for long term, reliable operation. 2 refer to the application note on soldering at www.cree.com/rf/document-library 3 measured for the cgh35060f1 at p diss = 28 w. electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 C2.3 v dc v ds = 10 v, i d = 14.4 ma gate quiescent voltage v gs(q) C -3.0 C v dc v ds = 28 v, i d = 250 ma saturated drain current i ds 11.6 14.0 - a v ds = 6.0 v, v gs = 2 v drain-source breakdown voltage v br 120 C C v dc v gs = -8 v, i d = 14.4 ma rf characteristics 2,3 (t c = 25 ? c, f 0 = 3.5 ghz unless otherwise noted) small signal gain g ss 10 11.5 C db v dd = 28 v, i dq = 250 ma drain effciency 4 19 23 C % v dd = 28 v, i dq = 250 ma, p ave = 8 w back-off error vector magnitude evm 1 C 2.5 C % v dd = 28 v, i dq = 250 ma, p ave = 24 dbm error vector magnitude evm 2 C 2.0 2.5 % v dd = 28 v, i dq = 250 ma, p ave = 8 w output mismatch stress vswr C C 10:1 y no damage at all phase angles, v dd = 28 v, i dq = 250 ma dynamic characteristics input capacitance c gs C 19.0 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 5.9 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.8 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging. 2 measured in the CGH35060F1-AMP test fxture. 3 under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, 5 ms burst, symbol length of 59, coding type rs-cc, coding rate type 2/3, par = 9.8 db @ 0.01 % probability on ccdf. 4 drain effciency = p out / p dc. cgh35060f1 / cgh35060p1 rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/rf copyright ? 2008-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical wimax performance gain and return loss vs frequency measured in broadband amplifer circuit CGH35060F1-AMP, v dd = 28 v, i dq = 250 ma typical evm at 26 dbm and 39 dbm, and effciency vs frequency measured in broadband amplifer circuit CGH35060F1-AMP, v dd = 28 v, i dq = 250 ma note: under 802.16-2004 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, symbol length of 59, coding type rs-cc, coding rate type 2/3. -6 -4 -2 0 10 12 14 16 s1 1 ( d b ) s21 ( d b ) s21 s21 -16 -14 -12 -10 -8 0 2 4 6 8 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 s1 1 ( d b ) s21 ( d b ) frequency (ghz) s21 s11 s11 18% 21% 24% 27% 30% 33% 36% 3.0 3.5 4.0 4.5 5.0 5.5 6.0 ef f i ci en cy evm ( % ) evm @ 26 dbm evm @ 39 dbm efficiency efficiency 0% 3% 6% 9% 12% 15% 18% 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 ef f i ci en cy evm ( % ) frequency (ghz) evm cgh35060f1 / cgh35060p1 rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/rf copyright ? 2008-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical wimax performance drain effciency and gain vs output power measured in the CGH35060F1-AMP, v dd = 28 v, i dq = 250 ma, 802.16-2004 ofdm, par = 9.8 db typical evm and effciency vs output power measured in the CGH35060F1-AMP, v dd = 28 v, i dq = 250 ma, 802.16-2004 ofdm, par=9.8 db note: under 802.16-2004 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, symbol length of 59, coding type rs-cc, coding rate type 2/3. 14% 16% 18% 20% 22% 24% 26% 2.8 3.2 3.6 4.0 4.4 4.8 5.2 ef f i ci en cy evm ( % ) evm efficiency efficiency 0% 2% 4% 6% 8% 10% 12% 0.0 0.4 0.8 1.2 1.6 2.0 2.4 22 24 26 28 30 32 34 36 38 40 ef f i ci en cy evm ( % ) output power (dbm) evm 16% 18% 20% 22% 24% 26% 28% 30% 32% 8 9 10 11 12 13 14 15 16 ef f i ci en cy gai n ( d b ) gain efficiency 0% 2% 4% 6% 8% 10% 12% 14% 16% 0 1 2 3 4 5 6 7 8 22 24 26 28 30 32 34 36 38 40 ef f i ci en cy gai n ( d b ) output power (dbm) gain efficiency cgh35060f1 / cgh35060p1 rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/rf copyright ? 2008-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 typical performance data simulated maximum available gain and k factor of the cgh35060f1 and cgh35060p1 v dd = 28 v, i dq = 250 ma typical noise performance simulated minimum noise figure and noise resistance vs frequency of the cgh35060 v dd = 28 v, i dq = 250 ma mag (db) k factor minimum noise figure (db) noise resistance (ohms) cgh35060f1 / cgh35060p1 rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/rf copyright ? 2008-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 source and load impedances frequency (mhz) z source z load 3300 3.5 - j12.1 6.5 - j6.8 3400 3.5 - j11.4 6.0 - j5.9 3500 3.3 - j10.7 5.6 - j5.1 3600 3.2 - j10.0 5.4 - j4.3 note 1 : v dd = 28v, i dq = 250ma. in the 440193 package. note 2 : impedances are extracted from the CGH35060F1-AMP demonstration circuit and are not source and load pull data derived from the transistor. electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c d z source z load g s cgh35060f1 / cgh35060p1 rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/rf copyright ? 2008-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 CGH35060F1-AMP demonstration amplifer circuit bill of materials designator description qty r1 res, 1/16w, 0603, 1%, 5.1 ohms 1 r2 res, 1/16w, 0603, 1%, 100 ohms 1 c6,c13,c19 cap, 470pf, 5%,100v, 0603 3 c16,c22 cap, 33 uf, 20%, g case 2 c15,c21 cap, 1.0uf, 100v, 10%, x7r, 1210 2 c8 cap 10uf 16v tantalum 1 c4,c11,c17 cap, 7.5pf, +/-0.1pf, 0603, atc 3 c1 cap, 0.6pf, +/-0.05pf, 0603, atc 2 c2 cap, 1.2pf, +/-0.1pf, 0603, atc 1 c10 cap, 4.7pf, +/-0.25pf, 100b, atc 3 c5,c12,c18,c30,c31 cap, 47pf, +/-5%, 0603, atc 5 c7,c14.c20 cap, 33000pf, 0805, 100v, x7r 2 j2,j3 conn, sma, panel mount jack, flange 2 j1 header rt>plz .1cen lk 5pos 1 q1 cgh35060f1 1 cgh35060f1-tb demonstration amplifer circuit cgh35060f1 / cgh35060p1 rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/rf copyright ? 2008-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 CGH35060F1-AMP demonstration amplifer circuit schematic CGH35060F1-AMP demonstration amplifer circuit outline cgh35060f1 / cgh35060p1 rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/rf copyright ? 2008-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 typical package s-parameters for cgh35060f1/p1 (small signal, v ds = 28 v, i dq = 250 ma, angle in degrees) frequency mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 500 mhz 0.932 -170.73 7.26 79.93 0.014 -5.48 0.616 -170.30 600 mhz 0.933 -173.14 6.04 75.95 0.014 -8.53 0.624 -170.60 700 mhz 0.933 -175.02 5.17 72.27 0.014 -11.26 0.632 -170.73 800 mhz 0.934 -176.56 4.51 68.80 0.014 -13.77 0.640 -170.79 900 mhz 0.935 -177.90 3.99 65.50 0.014 -16.12 0.648 -170.84 1.0 ghz 0.936 -179.09 3.58 62.32 0.014 -18.33 0.657 -170.91 1.1 ghz 0.937 179.82 3.24 59.24 0.013 -20.41 0.666 -171.02 1.2 ghz 0.937 178.80 2.96 56.27 0.013 -22.38 0.675 -171.18 1.3 ghz 0.938 177.82 2.73 53.38 0.013 -24.25 0.684 -171.38 1.4 ghz 0.939 176.88 2.53 50.57 0.013 -26.02 0.693 -171.64 1.5 ghz 0.940 175.95 2.35 47.83 0.012 -27.69 0.702 -171.94 1.6 ghz 0.941 175.04 2.20 45.17 0.012 -29.28 0.710 -172.30 1.7 ghz 0.942 174.13 2.07 42.56 0.012 -30.78 0.718 -172.69 1.8 ghz 0.942 173.22 1.96 40.01 0.012 -32.20 0.726 -173.13 1.9 ghz 0.943 172.30 1.86 37.51 0.012 -33.53 0.733 -173.60 2.0 ghz 0.943 171.37 1.77 35.06 0.011 -34.79 0.740 -174.11 2.1 ghz 0.944 170.42 1.69 32.65 0.011 -35.98 0.746 -174.64 2.2 ghz 0.944 169.44 1.62 30.28 0.011 -37.09 0.752 -175.21 2.3 ghz 0.944 168.44 1.56 27.94 0.011 -38.14 0.757 -175.80 2.4 ghz 0.944 167.42 1.51 25.63 0.011 -39.12 0.762 -176.41 2.5 ghz 0.944 166.35 1.47 23.33 0.011 -40.03 0.767 -177.05 2.6 ghz 0.944 165.25 1.43 21.06 0.010 -40.89 0.771 -177.70 2.7 ghz 0.944 164.10 1.39 18.79 0.010 -41.69 0.775 -178.38 2.8 ghz 0.943 162.90 1.36 16.52 0.010 -42.44 0.778 -179.08 2.9 ghz 0.943 161.64 1.34 14.25 0.010 -43.15 0.780 -179.81 3.0 ghz 0.942 160.32 1.32 11.97 0.010 -43.81 0.783 179.45 3.2 ghz 0.939 157.45 1.29 7.34 0.010 -45.03 0.786 177.90 3.4 ghz 0.936 154.21 1.29 2.56 0.010 -46.16 0.787 176.26 3.6 ghz 0.932 150.50 1.30 -2.45 0.010 -47.28 0.786 174.50 3.8 ghz 0.926 146.18 1.32 -7.79 0.010 -48.49 0.783 172.62 4.0 ghz 0.918 141.08 1.37 -13.59 0.011 -49.93 0.778 170.58 4.2 ghz 0.907 134.91 1.45 -20.01 0.011 -51.79 0.770 168.35 4.4 ghz 0.893 127.31 1.55 -27.29 0.012 -54.34 0.759 165.88 4.6 ghz 0.875 117.74 1.68 -35.72 0.013 -57.92 0.745 163.12 4.8 ghz 0.851 105.40 1.85 -45.68 0.014 -62.99 0.726 159.95 5.0 ghz 0.821 89.23 2.06 -57.67 0.016 -70.09 0.701 156.25 5.2 ghz 0.788 67.93 2.29 -72.20 0.018 -79.82 0.668 151.81 5.4 ghz 0.763 40.72 2.50 -89.57 0.019 -92.51 0.624 146.32 5.6 ghz 0.760 8.85 2.62 -109.47 0.021 -107.92 0.563 139.43 5.8 ghz 0.789 -23.42 2.60 -130.80 0.021 -124.97 0.479 130.69 6.0 ghz 0.837 -51.66 2.44 -152.19 0.020 -142.29 0.367 119.31 to download the s-parameters in s2p format, go to the cgh35060f1/p1 product page, click on the documentation tab. cgh35060f1 / cgh35060p1 rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/rf copyright ? 2008-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 product dimensions cgh35060f1 (package type 440193) product dimensions cgh35060p1 (package type 440196) cgh35060f1 / cgh35060p1 rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/rf copyright ? 2008-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 product ordering information order number description unit of measure image cgh35060f1 gan hemt each cgh35060p1 gan hemt each 4.5812 in cgh35060f1-tb test board without gan hemt each CGH35060F1-AMP test board with gan hemt installed each cgh35060f1 / cgh35060p1 rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/rf copyright ? 2008-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
12 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or dir ect operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing & export cree, rf components 919.407.5302 ryan baker marketing cree, rf components 919.407.7816 tom dekker sales director cree, rf components 919.407.5639 cgh35060f1 / cgh35060p1 rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree www.cree.com/rf copyright ? 2008-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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